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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4424 DESCRIPTION *With TO-3PML package *High breakdown voltage, high reliability. *Fast switching speed. *Wide ASO. APPLICATIONS *Switching regulator applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION * Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 16 32 6 60 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4424 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEX(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; IE=0 IC=10mA; RBE= IE=1mA; IC=0 IC=8A;IB1=0.8A; IB2=-3.2A;L=200H IC=10A;IB=2A IC=10A;IB=2A VCB=400V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=10A ; VCE=5V IC=10mA ; VCE=5V IC=2A ; VCE=10V VCB=10V;f=1MHz 15 10 10 20 230 MHz pF MIN 500 400 7 400 0.8 1.5 10 10 50 TYP. MAX UNIT V V V V V V A A Switching times ton tstg tf Turn-on time Storage time Fall time IC=12A;RL=16.6 IB1=2.4A;- IB2=4.8A VCC=200V 0.5 2.5 0.3 s s s hFE-1 classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4424 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4424 4 |
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